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| Datasheet File OCR Text: |
| Gunter Semiconductor GmbH P Channel Power MOSFET GFC9130 Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 175 Operating Temperature * Fast Switching * Fully Avalanche Rated Mechanical Data: D39 2.88mm x 4.57mm Dimension 400 m Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn 10 mil Al Source Bonding Wire: Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Temperatre Storage Temperature @Ta=25 Symbol -V(BR)DSS RDS(ON) --ID@25 --ID@100 Tj Limit Unit Test Conditions - VGS=0V, -ID=250 - VGS=10V, - ID=7.2 - VGS=10V - VGS=10V 100 0.3 12 8.2 -55~175 -55~175 V A A TSTR Target Device: IRF9530 TO-220AB PD 88 W @Tc=25 |
Price & Availability of GFC9130
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